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소재 및 부속품

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N Type IBC Solar Cell

모델명 :
  • - Dimension : 158.75mm x 158.75mm
  • - Thickness : 190±30 μm
  • - Front : 9 Busbars
  • - Back : 9 Busbars
제품 견적문의

상품상세정보

In the interdigitated back contact (IBC) cell structure the emitter and contact are both on the back side of the wafer which allows independent optimization of the front surface for optical properties and back surface for electronic properties of the emitter and contacts. IBC solar cells have shown outstanding performance either on concentration or one-sun illumination. The advantages of this design include that there is no contact grid shading at the sunward side and potentially low substrate cost due to a thin device design. Moreover, the module assembling costs are potentially lower as both contacts are on the rear. Finally, the solar cells can be placed closer together in the module because there is no need for a space between the cells. Interdigitated Back Contact(IBC) solar cell is the key solution to the challenge of increasing cell efficiency and lowering the cost of solar cell manufacturing in solar cell industries. 



【Product description】

N-type Mono bifacial PERT (passivated emitter rear totally diffused) silicon solar cells possesses high and stabilized conversion efficiencies.

N-type silicon solar cells are considered as promising alternatives to p-type solar cells for next generation highly efficient solar cells thanks to their ability to withstand light-induced degradation and to their higher tolerance to common metal impurities.

The n type bifacial PERT solar cell can be manufactured with process flow by using ion implant for single-sided doping for excellent emitter junction quality and uniformity, a single thermal anneal, integrated AlOx/ SiNx passivation layer and screen printed Ag grid on front and rear.

N pert cross small

【Process flow】

Process flow drawn

【Key features】

High conversion efficiency with high reliability

No light-induced degradation

Uniform cell performance with stable process control

Both sides can generate electricity

Excellent power generation performance under low irradiation

Low hot spot risk

【Technical Data】

 

TECHNICAL DATA AND DESIGN

TEMPERATURE COEFFICIENTS AND SOLDERABILITY

Dimension

158.75mm*158.75mm±0.25

TkUoc (%/K)

-0.302

Thickness

190±30 μm

TkIsc  (%/K)

+0.048

Front

9 Busbars

TkPMAX  (%/K)

-0.38

Back

9 Busbars

Peel Strength Minimum

>1.4N/mm

 

ELECTRICAL PARAMETERS at STC

No.

Efficiency (%)

Pmpp (W)

Uoc (V)

Isc (A)

FF (%)

1

23.00%

5.75

0.700

10.110

81.28

2

22.90%

5.73

0.699

10.098

81.19

3

22.80%

5.70

0.698

10.070

81.13

4

22.70%

5.68

0.697

10.063

81.02

5

22.60%

5.65

0.696

10.045

80.86

6

22.50%

5.63

0.695

10.031

80.78

7

22.40%

5.60

0.694

10.011

80.64

8

22.30%

5.58

0.693

10.000

80.55

9

22.20%

5.55

0.692

9.986

80.40

10

22.10%

5.53

0.691

9.979

80.24

11

22.00%

5.50

0.690

9.961

80.07

12

21.90%

5.48

0.689

9.951

79.96

13

21.80%

5.45

0.688

9.933

79.82

14

21.70%

5.43

0.687

9.914

79.78

15

21.60%

5.40

0.686

9.895

79.62

16

21.50%

5.38

0.685

9.875

79.58

17

21.40%

5.35

0.684

9.856

79.42

18

21.30%

5.33

0.683

9.844

79.34

19

21.20%

5.30

0.682

9.818

79.22

20

21.10%

5.28

0.681

9.800

79.18

21

21.00%

5.25

0.680

9.775

79.08