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소재 및 부속품

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CIGS Copper Indium Gallium Diselenide Solar Cell

모델명 :
  • - Length 312mm+2/-4mm
  • - Width 43.75mm±0.005mm
  • - Thickness 0.33mm±0.1mm
제품 견적문의

상품상세정보

【Product description】

Thin-film PV, in particular CIGS, is a key technology to be one of the future technologies of photovoltaics and has great potential for further technological developments. CIGS thin-film modules have more and more investment in the solar industry.

As technology advancing it was later found that by substituting gallium (Ga) for indium (In), the bandgap can be increased from about 1.04 electron-volts (eV) for copper indium diselenide (CIS) films to about 1.68 eV for copper gallium diselenide (CGS) films. Optimal devices have been fabricated with only a partial substitution of Ga for In, leading to a substantial increase in overall efficiency and more optimal bandgap. These solar cells are commonly known as a copper indium gallium diselenide [Cu(InxGa1-x)Se2], or CIGS, cells.

The benefits of CIGS solar cells include:

High absorption: This direct-bandgap material can absorb a significant portion of the solar spectrum, enabling it to achieve the highest efficiency of any thin-film technology.

Tandem design: A tunable bandgap allows the possibility of tandem CIGS devices.

Protective buffer layer: The grain boundaries form an inherent buffer layer, preventing surface recombination and allowing for films with grain sizes of less than 1 micrometer to be used in device fabrication.


cigs cell structure


【Process flow】


Co-evaporation example

Alternatives

Glass:   2mm or 3.2mm

Stainless   foil: 25um

Aluminum  

polyimide

Molybdenum   sputter, 0.3-1um

Barrier   layers: Cr/Nitride

Na   barrier / Se barrier / Oxide barrier

CIGS:   1stage / 2stage / 3stage

Cu,   In, Ga are co-evaporated in Se overpressure CIGS 1-2um

CIGS:   Reactive sputtering, Ink deposition / Coating,

Selenization,   Co-evaporation

Buffer   layer: Chemical bath

Deposition   (CBD)

CdS,   20-80nm

Buffer   layer: Chemical bath deposition(CBD) / sputter;

Zn(O,S):   20-80nm;

Window   layer: Sputter

Resistive:   i-ZnO, 0.1-0.12um

Conductive:   AZO, 0.1-0.15um

Window   layer: MoCVD

ZnO:B;   InZnO; ITO

Grids:   evaporation

Ni(150-500A)   , Ag(500-6000A)

Al   (2-3um)

Grids   / Screen print / Wire

Overlay   / Tab and string

Interconnects  

 

【Key features】

No light induced degradation

 Total area efficiency of up to 18%

Thiciness of thin to 0.33mm

Lightweight of lower to 7.5 gm

Ideal for many specialized uses.

Able to be modified to suit various applications.

Bendable and flexible

 

【Technical Data】

TECHNICAL DATA AND DESIGN


TEMPERATURE COEFFICIENTS AND SOLDERABILITY

Length

312mm+2/-4mm


TkUoc (%/K)

-0.28

Width

43.75mm±0.005mm


TkIsc  (%/K)

+0.008

Thickness

0.33mm±0.1mm


TkPMAX  (%/K)

-0.379

Cell type

Copper Indium Gallium Diselenide


Peel Strength Minimum

>1.4N/mm

 

ELECTRICAL PARAMETERS at STC

No.

Efficiency (%)

Pmpp (W)

Uoc (V)

Isc (A)

Vmpp (V)

Impp (A)

FF (%)

1

18.00%

2.45

0.681

4.7

0.561

4.37

76.59%

2

17.50%

2.38

0.676

4.7

0.552

4.31

74.88%

3

17.00%

2.32

0.673

4.7

0.545

4.25

73.23%

4

16.50%

2.25

0.670

4.7

0.538

4.17

71.24%

5

16.00%

2.18

0.664

4.7

0.531

4.11

69.93%

6

15.50%

2.12

0.661

4.7

0.526

4.04

68.40%

7

15.00%

2.06

0.658

4.7

0.521

3.97

66.88%

8

14.50%

2.01

0.655

4.7

0.516

3.90

65.37%