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P Type Monocrystalline Solar Wafer

모델명 :

M4 P-type monocrystalline wafer is 161.7mm x 161.7mm.

M4 161x161

P type monocrystalline wafer 1

P type monocrystalline wafer 2

1 Material properties

Property	Specification	Inspection Method
Growth method	CZ
Crystallinity	Monocrystalline	Preferential Etch Techniques（ASTM F47-88）
Conductivity type	P-type	Napson EC-80TPN P/N
Dopant	Boron	-
Oxygen concentration[Oi]	≦8E+17 at/cm³	FTIR (ASTM F121-83)
Carbon concentration[Cs]	≦5E+16 at/cm³	FTIR (ASTM F123-91)
Etch pit density(dislocation density)	≦500 cm^-3	Preferential Etch Techniques（ASTM F47-88）
Surface orientation	<100>±3°	X-ray Diffraction Method (ASTM F26-1987)
Orientation of pseudo square sides	<010>,<001>±3°	X-ray Diffraction Method (ASTM F26-1987)

2 Electrical properties

Property

Specification

Inspection Method

Resistivity

0.5-1.5 Ωcm

Wafer inspection system

MCLT (minority carrier lifetime)

≧50 μs

Sinton BCT-400

(with injection level: 1E15 cm^-3)

3 Geometry

Property	Specification	Inspection Method
Geometry	Quasi square
Wafer Side length	161.7±0.25 mm	wafer inspection system
Wafer Diameter	φ221±0.25 mm	wafer inspection system
Angle between adjacent sides	90° ± 0.2°	wafer inspection system
Thickness	180 ﹢ 20/﹣10 µm; 170﹢ 20/﹣10 µm	wafer inspection system
TTV (Total thickness variation)	≤ 27 µm	wafer inspection system

4 Surface properties

Property	Specification	Inspection Method
Cutting method	DW	--
Surface quality	as cut and cleaned, no visible contamination, (oil or grease, finger prints, soap stains, slurry stains, epoxy/glue stains are not allowed)	wafer inspection system
Saw marks / steps	≤ 15µm	wafer inspection system
Bow	≤ 40 µm	wafer inspection system
Warp	≤ 40 µm	wafer inspection system
Chip	depth ≤0.3mm and length ≤ 0.5mm Max 2/pcs; no V-chip	Naked eyes or wafer inspection system
Micro cracks / holes	Not allowed	wafer inspection system