Smile, Smart, Speed

고객의 만족을 위하여 최선을 다하는 기업, 정문사이언스입니다.

소재 및 부속품

HomeHOME > 회사소개 >소재 및 부속품

P Type Monocrystalline Solar Wafer

모델명 :
  • - Crystallinity : Monocrystalline
  • - Conductivity type : P-type
  • - Dopant : Boron
  • - 158.75mm
제품 견적문의

상품상세정보


P type monocrystalline wafer 1


P type monocrystalline wafer 2


Currently silicon solar PV is mainly using 156.75mm x 156.75mm P-type monocrystalline wafers, but some the them are migrating to larger wafer and cell sizes such as 158.75mm x 158.75mm. Some of the manufacturers have already started that process. One of the reason for the 158.75mm square wafer getting more focus is that the close module dimensions to past standard 60-cell and 72-cell modules, providing retrofit and retention of existing manufacturing equipment. 

In the future for mono-Si wafers, 158.75mm full square will become the most adopted design by most solar PV manufacturers. Of course there are a few manufacturers use wafers that are larger than this. LG and Hanwha Q Cells, for instance, use M4 wafers (161.7mm), while Longi is promoting 166mm(M6) wafers.


1      Material properties

 

Property

Specification

Inspection   Method

Growth   method

CZ


Crystallinity

Monocrystalline

 

Preferential   Etch Techniques（ASTM   F47-88）

Conductivity   type

P-type

Napson   EC-80TPN

P/N

Dopant

 

Boron

 

-

Oxygen  concentration[Oi]

≦8E+17   at/cm3

FTIR (ASTM   F121-83)

Carbon  concentration[Cs]

≦5E+16   at/cm3

FTIR (ASTM   F123-91)

Etch pit   density(dislocation density)

≦500 cm-3

Preferential   Etch Techniques（ASTM   F47-88）

Surface   orientation

<100>±3°

X-ray   Diffraction Method (ASTM F26-1987)

Orientation   of pseudo square sides

<010>,<001>±3°

X-ray   Diffraction Method (ASTM F26-1987)

 

2      Electrical properties

 

Property

Specification

Inspection   Method

Resistivity

0.5-1.5 Ωcm

Wafer inspection system

MCLT (minority carrier lifetime)

≧50 μs

Sinton BCT-400

(with injection level: 1E15 cm-3)

 

3      Geometry

 


Property

Specification    

Inspection     Method

Geometry

Full   square


Wafer Side length

158.75±0.25 mm

wafer inspection system

Wafer Diameter

φ223±0.25 mm

wafer inspection system

Angle between adjacent sides

90° ± 0.2°

wafer inspection system

Thickness

180 ﹢ 20/﹣10 µm;

170﹢ 20/﹣10 µm

wafer inspection system

TTV (Total thickness variation)

≤ 27 µm

wafer inspection system



 image

 

 

4      Surface properties

 

Property

Specification    

Inspection     Method

Cutting method

DW

--

Surface    quality

as cut   and cleaned, no visible contamination, (oil or grease, finger prints, soap   stains, slurry stains, epoxy/glue stains are not allowed)

wafer   inspection system

Saw marks / steps

≤ 15µm

wafer   inspection system

Bow

≤ 40 µm

wafer   inspection system

Warp

≤ 40   µm

wafer   inspection system

Chip

depth   ≤0.3mm and length ≤ 0.5mm  Max 2/pcs;   no V-chip

Naked eyes or wafer inspection system

Micro cracks / holes

Not   allowed

wafer   inspection system