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335W Eclipse Solar Panel
【Product introduction】 | |
Cell | Mono 156.75mmx31.2mm High Efficiency Solar Cell |
No. of cells | 340(34×10) |
Rated Maximum Power(Pmax) | 335W |
Junction Box | IP67 |
Maximum System Voltage | 1000V/1500V DC(IEC) |
Operating Temperature | -40℃~+85℃ |
Dimensions | 1623mm×1048mm×35mm |
Weight | 18.5kg±3% |
【Product description】
By shingling the solar cells, the space between cells is reduced, allowing more cells to be arranged on each panel. As a result, close to 100% of the panel is covered with solar cells.
New designed shingled solar module boost efficiency and reliability, but reduce BOS cost at the same time, providing an elegant solution that improves both efficiency and aesthetics.
Flexibility of adhesive interconnection of the new design helps to reduce thermal stress in temperature cycling tests. No ribbon required reduces the micro crack potential.
5-10% more module power is gain for the new design solar modules which is the result of application of conductive paste that enables novel interconnection technologies.
1 KEY FEATURES
2 MECHANICAL DIAGRAMS
3 ELECTRICAL PARAMETERS at STC
Rated Maximum Power(Pmax) [W] | 320 | 325 | 330 | 335 |
Open Circuit Voltage(Voc) [V] | 44.46 | 44.71 | 44.91 | 45.16 |
Maximum Power Voltage(Vmp) [V] | 36.41 | 36.61 | 36.80 | 37.06 |
Short Circuit Current(Isc) [A] | 9.22 | 9.30 | 9.40 | 9.48 |
Maximum Power Current(Imp) [A] | 8.80 | 8.87 | 8.96 | 9.04 |
Module Efficiency [%] | 18.81 | 19.11 | 19.40 | 19.70 |
Power Tolerance | 0~+5W | |||
Temperature Coefficient of Isc(α_Isc) | 0.05%/℃ | |||
Temperature Coefficient of Voc(β_Voc) | -0.275%/℃ | |||
Temperature Coefficient of Pmax(γ_Pmp) | -0.368%/℃ | |||
STC | Irradiance 1000W/m², cell temperature 25℃, AM1.5G |
Monocrystalline silicon has diamond crystal lattice, the crystal is hard and brittle, has metallic luster, can conduct electricity, but the conductivity is inferior to the metal, and increases with the temperature rise, has the semiconductor property. Monocrystalline silicon is an important semiconductor material. Incorporation of trace elements of group IIIA into monocrystalline silicon can form p-type semiconductor, and incorporation of trace elements of group VA can form n-type, n-type and p-type semiconductor together, which can be made into solar cell and turn radiant energy into electric energy.