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1650℃ Bridgman single crystal growth furnace for Silicon Nitride Crystal

모델명 : CY-CGF1650
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1650℃ Bridgman crystal growth furnace is mainly used in the field of semiconductor materials to grow various single crystals, including silicon, sapphire, silicon nitride, silicon carbide, etc. It can grow high-purity, high-quality and large-size single crystals for the production of semiconductor devices, lasers, optoelectronic devices, etc.

Technical parameters of Bridgman crystal growth furnace:

Product   name

1650℃ Bridgman single crystal growth   furnace

Product   model

CY-CGF1650-Φ80-100×100×100-V-T

Power   supply

Maximum power：15KW

Operating   temperature

Maximum operating temperature：1650℃（<1小时）

Continuous operating temperature：1600℃

Heating   element

Silicon molybdenum rod

Furnace   tube

High purity alumina furnace tube, size：Φ80×1070mm

Flange

Stainless steel sealing flange

Sample   table

Alumina sample stage size: Φ60×100mm

A type B thermocouple is inserted into   the bottom of the sample stage to measure the crucible temperature in real   time

Crucible   loading

Automatic sample stage lifting,   convenient for crucible placement/sampling, maximum stroke 700mm

Heating   zone

Three-temperature zone furnace, forming a   large temperature gradient (each temperature zone is 100mm long, the total   temperature zone is 300mm)

Temperature   control system

PID temperature control, 30 temperature   rise and fall programs can be set

With over-temperature and burnout   protection

Three B-type thermocouples

Furnace   travel

The maximum moving stroke of the furnace   is 500mm

Furnace   travel speed

0.03~3mm/H

Vacuum   pump

Double-stage rotary vane vacuum pump 1.1L/S

Power   supply

220V 50HZ

Water   cooling

With a 10L water cooler

Weight

600kg

Dimensions

900X1000X3200mm