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고객의 만족을 위하여 최선을 다하는 기업, 정문사이언스입니다.
고객의 만족을 위하여 최선을 다하는 기업, 정문사이언스입니다.
Dual chamber pulse laser coater
Dual chamber pulse laser coater
Dual chamber pulse laser coater consists
of vacuum chamber (main sputtering chamber, sample inlet chamber), sample
transfer mechanism, sample frame, rotating target table, vacuum exhaust, vacuum
measurement, electrical control, gas distribution, computer control and other
parts.
Dual chamber pulse laser coater is used for
growing optical crystals, ferroelectrics, ferromagnets, superconductors and
organic compound thin film materials, suitable for growing high melting point,
multi-elements and complex layered superlattice thin film materials containing
gas elements. It is widely used in the research and manufacture of thin film
materials in colleges and universities.
Dual chamber pulse laser coater
specifications:
Main vacuum system |
Sphere structure, size: dia. 450mm |
|
Loading sample system |
Vertical cylindrical stucture, size: dia.
150×150mm |
|
Vacuum system configuration |
Main vacuum chamber |
Mechanical pump, molecular pump, valve |
Loading sample system |
Mechanical pump and molecular
pump(sharing with primary chamber), valve |
|
Ultimate pressure |
Main vacuum system |
≤6*10-6Pa(after baking and degassing) |
Loading sample system |
≤6*10-3 Pa(after baking and degassing) |
|
Vacuum recovery system |
Main vacuum system |
It can reach 5x10-3Pa in 20 minutes (the
system is exposed to the atmosphere for a short time and filled with
dry nitrogen to start pumping) |
Loading sample system |
It can reach 5x10-3Pa in 20 minutes (the
system is exposed to the atmosphere for a short time and filled with
dry nitrogen to start pumping) |
|
Rotating target platform |
The maximum size of the target is about
60mm. Four target materials can be installed at one time, target changing in
revolution motion; each target can rotate independently, rotation speed: 5-60
rpm |
|
Substrate heating platform |
Sample size |
Dia. 51 |
Mode of motion |
Substrate rotates continuously, rotation
speed:5-60 rpm |
|
Heating temperature |
Maximum temperature of substrate heating:
800℃±1℃, Controlled and adjustable |
|
Gas circuit system |
1-circuit mass flow controller, 1-circuit
inflation valve |
|
Optional accessories |
Laser device |
Compatible with coherent 201 laser |
Laser beam scanning device |
2D scanning mechanical platform, perform
two degree of freedom scanning. |
|
Computer control system |
The contents of control include common
conversion target, target rotation, sample rotation, sample temperature
control, laser beam scanning, etc. |
|
Floor Space |
Main unit |
1800 * 1800mm2 |
Electric cabinet |
700 *700mm2(one) |