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PECVD Plasma Enhanced Chemical Vapor Deposition

모델명 :
제품 견적문의

상품상세정보

chemical vapor deposition using plasma enhanced chemical vapor deposition technology, low basic temperature, fast deposition rate, deposition of silicon nitride, amorphous silicon and microcrystalline silicon films on optical glass, silicon, quartz, stainless steel and other substrate materials, good film forming quality, fewer pinholes, not easy to crack. It is suitable for the preparation of amorphous silicon and microcrystalline silicon thin film solar cell devices, and can be widely used in the research and small batch preparation of thin film materials in colleges and universities and scientific research institutes.

Main functions and characteristics 

PECVD equipment uses the principle of flat plate capacitive glow discharge to dissociate the process gas passing into the deposition chamber and generate plasma. The dissociated groups re-react chemically in the plasma. Due to the presence of plasma, the decomposition, combination, excitation and ionization of gas molecules are promoted, and the formation of reactive groups is promoted, thus reducing the deposition temperature. A film is deposited on a substrate at a certain temperature. The density and energy of the plasma can be adjusted according to the process, and the growth rate and microstructure of the film can be controlled.

Product parameters: 

Product model

CY-PECVD-240 chemical vapor deposition   equipment

Installation condition

The equipment is required to be used at   an altitude of less than 1000m, at a temperature of 25 ° C ±15 ° C, and at   a humidity of 55%Rh±10%Rh.

1, water: The equipment is equipped with   self-circulating cooling machine (filled with pure water or deionized water)

2, electricity: AC220V 50Hz, must have   good grounding

3. Gas: Nitrogen/argon (purity above   99.99%) should be filled in the equipment chamber, and the gas cylinder   required for the experiment should be prepared by itself (with Ø10mm double   sleeve joint) and pressure reducing valve

4, ventilation device: required

Main feature

1. Low film forming temperature required

2. Fast deposition rate and wide   application

3. Small size, easy to operate

4. Easy to control using radio frequency   as the enhancement source

5. Easy to clean and install.

6. Integrated touch screen control

Radio frequency power supply

Signal frequency: 13.56MHz±0.005%

Power output: 0~500W

Reflected power: <3W (maximum power)

Power stability: ±0.1%

Vacuum chamber

The capacitive coupling mode is adopted   with the sample table at the bottom and the gas supply nozzle at the top.

Sample heating: RT-1000℃ above, temperature control   accuracy: ±1°C

Sample speed: adjustable speed: 1-20rpm   adjustable

Spray head: Φ100mm spacing 40-100mm online   continuous adjustable

Sample stand: Diameter 100mm

Vacuum chamber: front door type, φ245mm X 300mm stainless steel

Observation window: φ100mm with baffle

Gas supply system

Measuring range

Channel A: 0 ~ 200SCCM, Ar gas

Channel B: 0 to 200SCCM, O2 gas

Channel C: 0 ~ 200SCCM, N2 gas

Liquid source: Argon or nitrogen

Connector specification :6.35mm sleeve   connector

Vacuum system

Port Type Suction port: KF40；Exhaust port: G1"

Exhaust velocity

Nitrogen: 60L/S

Nitrogen with protective net: 55L/S

Bearing type: Ceramic bearing, grease   lubricated

Cooling method: forced air cooling

Speed: 69000rpm

Startup time: 1.5 to 2 minutes

Stop time: 15 to 25 minutes

Compression ratio N2:2x 107

Compression ratio H2:3x 103

Max. allowable back pressure: 800Pa

Bearing life: 20000 hours

Molecular pump controller: TC75

Auxiliary pump type: two-stage rotary   vane vacuum pump

Exhaust speed: 160L/min

Deposition studio

0.133-40Pa(Can be adjusted according to   the process)

Vacuum gauge

Combined vacuum gauge

Water cooler

Water flow rate: 10L/min；Power: 0.1Kw

Cooling water temperature: <37℃

Warranty period

The standard warranty period is 1 year