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PECVD Plasma enhanced chemical vapor deposition coating equipment
CY-PECVD-450 film coating machine adopts
plasma enhanced chemical vapor deposition technology, which can use high-energy
plasma to promote the reaction process, effectively increase the reaction speed
and reduce the reaction temperature.
It is suitable for depositing thin films of
silicon nitride, amorphous silicon and microcrystalline silicon on different
substrates such as optical glass, silicon, quartz and stainless steel. It has
good film-forming quality, less pinholes and is not easy to crack. It is
suitable for the preparation of amorphous silicon and microcrystalline silicon
thin film solar cell devices. It can be widely used in the scientific research
and small batch preparation of thin film materials in Colleges and universities
and scientific research institutes.
Technical parameter of PECVD film
coating equipment:
Model |
CY-PECVD-450 |
Vacuum chamber |
front opening door, φ300mm x 300mm,
stainless steel viewing window: φ100mm with baffle |
Vacuum pump set |
Backing pump: rotary vane pump
pumping speed: 1.1L/s Secondary pump: Turbo molecular
pump pumping speed: 600L/s |
Ultimate vacuum |
1.0E-6Pa 1.0E-4Pa (Within 30 minutes) |
Vacuum (deposition) |
0.133~133Pa, adjusted according to the
process |
RF power |
13.56MHz, 500W (automatch) |
Flow control |
Mass flowmeter(default
Ar,0~200sccm) |
Dimensions |
1100mm x 800mm x1100mm |