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PECVD plasma enhanced chemical vapor deposition technology

모델명 :
제품 견적문의

상품상세정보

 chemical vapor deposition adopts plasma enhanced chemical vapor deposition technology, which can use high-energy plasma to promote the reaction process, effectively increase the reaction speed and reduce the reaction temperature.

It is suitable for depositing thin films of silicon nitride, amorphous silicon and microcrystalline silicon on different substrates such as optical glass, silicon, quartz and stainless steel. It has good film-forming quality, less pinholes and is not easy to crack. It is suitable for the preparation of amorphous silicon and microcrystalline silicon thin film solar cell devices. It can be widely used in the scientific research and small batch preparation of thin film materials in Colleges and universities and scientific research institutes.

Technical parameter:

RF   power supply

Signal   frequency

13.56MHz

Power   output range

0~500W

Maximum   reflected power

100W

Reflected   power (at maximum power)

<5W

Power   stability

±0.1%

Working   Chamber

Heating   temperature

RT-1000℃

Temperature   control accuracy

±1℃

Sample   holder

Φ200mm

Rotating   speed of sample holder

1-20rpm   adjustable

Spray   head size

Φ90mm

Distance

The   distance between the spray head and the sample is 40-100mm continuously   adjustable

Working   vacuum for deposition

0.   133- 133Pa (can be adjusted according to the technical process)

Flange  

The   top flange can be lifted by the motor, the substrate is easy to change, and   there is a visual window

Chamber

Stainless   steel material, Φ500mm * 500mm

Observation   window

Φ100mm,   with baffle

Gas   supply

system

Channel   numbers

6

Measuring   unit

Mass   flow controller

Measuring   range

A   channel: 0～200SCCM   for H2  

Remarks:   If other ranges are required, please specify when ordering. According to the   customer's specific requirements, the flow meter of corresponding gas type   and range is optional.

B   channel: 0～200SCCM   for CH4

C   channel: 0～200SCCM   for C2H4

C   channel: 0～500SCCM   for N2

D   channel: 0～500SCCM   for NH3

E   channel: 0～500SCCM   for Ar

Measurement accuracy

±1.5%F.S

Working   pressure difference

-0.15Mpa~0.15Mpa

Connecting   pipe

304   stainless steel

Gas   channel

304   stainless steel needle valve

Interface   specification

1/4"   ferrule connector for gas inlet and outlet

Vacuum   system

Backing   pump

4.7L/s

Molecular   pump

1200L/s

Vacuum   measurement

Compound   vacuum gauge, range 10-5Pa ~ 105Pa

Vacuum   degree

5.0*10-3Pa

Water   chiller

Cooling   water temperature

≦37℃

Water   flow

10L/min

Power

0.1KW

Cooling   power

50W/℃

Power   supply

AC220V   50Hz