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PECVD system for deposition of thick SiOx Ge-SiOx films

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제품 견적문의

상품상세정보

Plasma -enhanced chemical vapor deposition (PECVD) is a type of chemical vapor deposition characterized by the use of plasma activation at low temperatures to enhance the chemical vapor deposition reaction. The advantages of this method are that the deposition temperature is low, the deposition rate is fast, and the film produced has excellent electrical properties, good substrate adhesion and excellent step coverage.

 

PECVD vapor deposition application areas:

Plasma enhanced CVD systems can be used in: graphene preparation, sulfide preparation, nanomaterials preparation and other test sites. A variety of films such as    SiOx, SiNx, amorphous silicon, microcrystalline silicon, nano -silicon, SiC, diamond-like, etc. can be deposited on the surface of flake or similar shape samples, and P -type and N-type doped films can be deposited. The deposited film has good uniformity, compactness, adhesion and insulation. Widely used in cutting tools, high-precision molds, hard coatings, high-end decoration and other fields, PECVD vapor deposition  has a wide range of applications in ultra -large scale integrated circuits, optoelectronic devices, MEMS and other fields.

Technical parameters:

Model number

CY-PECVD-200SST

Cavity size

Phi 500 -

Warm zone length

200

Rf power supply

500W-

Temperature

1000    ℃

Pump for forestage

Molecular pump set

Display type

T

Warm zone

I-

Water cooler

CW5200

Cavity material

SS

Sample       heating

Heating temperature

Above     RT-1000℃,   temperature   control     accuracy:   ±1。C,   using temperature control meter for   temperature control;

Adjustable speed: 1-20rpm adjustable

Spray head size

Φ90mm, the electrode  spacing    between the spray head and the sample 40-100mm  online continuous adjustable (can  be adjusted according to the process), and   with a ruler index display

Sample Table

200mm diameter

Working vacuum for deposition

0.133-133Pa (can be adjusted according to   process)

Top flange

It can be lifted by motor, the substrate   is easy to change, and there is a visual port

Substrate Table

Linear and azimuth motion of the   substrate table, substrate heating and temperature control, mounting table   and touch screen control, substrate linear motion is manually controlled, and   substrate rotation is controlled by DC motors

Vacuum chamber

Front door opening type,  φ500mm X 500mm stainless steel

Observation window

φ100mm with baffle

Mass flowmeter

Six way mass flow meter

Number paths of gas

Six paths

Pressure range

0.15 Mpa to 0.15 Mpa

Range

0 to 100 SCCM (oxygen)

0 to 100 SCCM (CF4)

0 to 200 SCCM (SF6)

0 to 200 SCCM (argon)

0 to 500 SCCM (other gases air)

0-500 SCCM (other gases nitrogen)

Flow control range

Plus or minus 1.5%

Gas path material

304 stainless steel

Pipe joint

6.35mm bushing joint

Vacuum system

Front pump: oil-free vacuum pump 4.7L/S

Molecular pump: 1200L/S

Measuring range

1 x 10-5 to 1 x 105Pa

Measurement accuracy

1 x 10-5 ~ 1 x 10-4Pa±40% reading

1 x 10-4 ~ 1 x 105Pa for a reading of   ±20%